Dodam kilka dodatkowych komend do emulatora:
cat /proc/scsi/scsi- sprawdzenie producenta pamięci, w moim przypadku to ToshibaTHGBF7G9L4LBATRC(Taka sama jak w niektóry Samsung Galaxy S8 - S8 mają ponoć też różne warianty pamięci)
ls /proc/fs/*
Jeśli pokazujesd*** poniżej /proc/fs/f2fs, to pamięćUFS.Jeśli pokazuje mmc*** poniżej /proc/fs/f2fs, to pamięć eMMC.
Dodatkowo lista pamięci zaczerpnięta z xda developers, można trafić na Samsunga lub Toshibe:
Spoiler
SamsungUFSflashmemory is not a complete list (including examples of naming rules) by Mo Yun GS (April 25, 2017)Interface protocol: UFS2.0, HS-G2 2-Lane (5.8Gbps)KLUCG4J1BB-B0B1MLC UFS2.0 64GB 11.5x13x1.0 FBGA153KLUDG8J1BB-B0B1MLC UFS2.0 128GB 11.5x13x1.2 FBGA153Interface protocol: UFS2.0, HS-G3 1-Lane (5.8Gbps)KLUAG2G1CE-B0B1MLC UFS2.0 16GB 11.5x13x1.0 FBGA153KLUBG4G1CE-B0B1MLC UFS2.0 32GB 11.5x13x1.0 FBGA153KLUCG4J1CB-B0B1MLC UFS2.0 64GB 11.5x13x1.0 FBGA153KLUDG8J1CB-B0B1MLC UFS2.0 128GB 11.5x13x1.2 FBGA153Interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)KLUCG4J1EB-B0B1MLC UFS2.0 64GB 11.5x13x1.0 FBGA153KLUDG8J1EB-B0B1MLC UFS2.0 128GB 11.5x13x1.2 FBGA153KLUEG8U1EM-B0B1TLC UFS2.0 256GB 11.5x13x1.2 FBGA153Interface protocol: UFS2.1, HS-G3 2-Lane (11.6Gbps)KLUCG4J1ED - B0C1MLC UFS2.1 64GB 11.5x13x1.0 FBGA153KLUDG8V1EE-B0C1TLC UFS2.1 128GB 11.5x13x1.0 FBGA153KLUEG8U1EM-B0C1TLC UFS2.1 256GB 11.5x13x1.0 FBGA153-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------Naming rules for example: KLUDG8V1EE-B0C1 (UFS2.1, TLC)Character 1: K: "SamsungMemory"Samsungmemory (shipping /flash)Character 2: L: "MOVI NAND, MCP"flashmemory or MCP productCharacter 3: U:flashinterface type is "UFS"Character 4-5 DG: Memory density is 128GB (AG for 16GB, BG for 32GB, CG for 64GB, EG for 256GB)Character 6: 8: Composition is NAND8 + Microcontroller package contains 8 NAND chips and microcontrollersCharacter 7: V: NAND Small Clasification (Type or Density) is TLC Theflasharchitecture is TLCCharacter 8: 1: Supply voltage, mode voltage, modeCharacter 9: E: Controller version controller version (related to HS-Gx x-Lane)Character 10: E:Flashtype E-dieflashparticle type E-die (M, A, B, C, D, E, F, G)Character 11: -: hyphenCharacter 12: B: Package type is FBGA lead-free, halogen-free lead-free halogen-free FBGA packageCharacter 13: 0: Revision None The original version is not modifiedCharacter 14: C: Speed high speed (related to interface protocol version)Character 15: 1: Normal sample Normal sample
Where the 7th character is related to theflasharchitecture:1) SLC (Single-Level Cell) is 1 or 9;2) TLC (Triple-Level Cell) is V, U or Z;3) MLC (Multi-Level Cell) is A, B, C, D, E, G, J, K and so on-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------Toshiba UFSflashmemory is not a complete list (including naming rules example) by ink rhyme GS (April 25, 2017)
First Generation (January 2013) 24nm Process, Interface Protocol: UFS1.1, HS-G2 1-Lane (2.9Gbps)THGLF0G9B8JBAIEMLC UFS1.1 64GB 12x16x1.2 FBGA169Second generation (April 2014) 19nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)THGLF2G8C4KBADRMLC UFS2.0 32GB 11.5x13x1.0 FBGA153THGLF2G9C8KBADGMLC UFS2.0 64GB 11.5x13x1.2 FBGA153Third generation (before December 2015 *) 15nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)THGLF2G8J4LBATRMLC UFS2.032GB 11.5x13x1.0 FBGA153THGLF2G9J8LBATRMLC UFS2.0 64GB 11.5x13x1.0 FBGA153Fourth generation (before March 2016) 15nm process, interface protocol: UFS2.0, HS-G3 2-Lane (11.6Gbps)THGBF7G8K4LBATRMLC UFS2.0 32GB 11.5x13x1.0 FBGA153THGBF7G9L4LBATRMLC UFS2.0 64GB 11.5x13x1.0 FBGA153THGBF7T0L8LBATAMLC UFS2.0 128GB 11.5x13x1.04 FBGA153Fifth generation (October 2016) 15nm process, interface protocol: UFS2.1, HS-G3 2-Lane (11.6Gbps)THGAF4G8N2LBAIRMLC UFS2.1 32GB 11.5x13x1.0 FBGA153THGAF4G9N4LBAIRMLC UFS2.1 64GB 11.5x13x1.0 FBGA153THGAF4T0N8LBAIRMLC UFS2.1 128GB 11.5x13x1.0 FBGA153* Accurate start delivery time not found------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------Naming rules for example: THGAF4G9N4LBAIR (UFS2.1, 15nm, MLC)Character 1: T: "Toshiba" ToshibaCharacter 2: H: "Multi-chip" multi-chip packageCharacter 3: G: Symbol of Type offlashtype "IC" integrated circuitCharacter 4: A: Symbol of "voltage type" indicates the supply voltage typeCharacter 5: F: NAND Interface type is "UFS"Flashinterface type is UFSCharacter 6: 4: Uniquecodeof controller revision The built-in controller version is 4Character 7: G: Memory density calculated by G bits The capacity is represented by G bitsCharacter 8: 9: Memory density is 2 ^ 9 = 512G bits (64GB) 2 of 9thpower, 512G bits, ie 64GBCharacter 9: N: Symbol of "cell level" (cell technology) architecture for the MLCCharacter 10: 4: Number of stacked chips is 4 package contains the number of stacked chips 4Character 11: L: Symbol of "Design rule" 15nm (K for 19nm, J for 24nm) Process is 15nmCharacter 12-13: BA: Package type is BGA lead free and halogen free lead free halogen free BGA packageCharacter 14: I: Symbol of Mode "industrial version" -25ºC to 85ºC Industrial versionCharacter 15: R: Symbol of "Package size" 11.5mmx13mmx1.0mm package sizeAmong them, the first nine characters andflashmemory architecture:1) SLC (Single-Level Cell) is S or H;2) DLC (Dua-Level Cell) is D or E [infrequent];3) TLC (Triple-Level Cell) is T or U;4) MLC (Multi-Level Cell) is B, C, J, K, L, N and so on.